opposed gate-source transistor
- opposed gate-source transistor
- lauko tranzistorius su priešinėmis užtūra ir ištaka
statusas T sritis radioelektronika
atitikmenys: angl. opposed gate-source transistor
vok. Feldeffekttransistor mit einander gegenüberliegenden Gate und Source, m
rus. полевой транзистор с противоположно расположенными затвором и истоком, m
pranc. transistor à effet de champ à source et drain opposées, m
Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“.
Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas.
2000.
Look at other dictionaries:
transistor à effet de champ à source et drain opposées — lauko tranzistorius su priešinėmis užtūra ir ištaka statusas T sritis radioelektronika atitikmenys: angl. opposed gate source transistor vok. Feldeffekttransistor mit einander gegenüberliegenden Gate und Source, m rus. полевой транзистор с… … Radioelektronikos terminų žodynas
Feldeffekttransistor mit einander gegenüberliegenden Gate und Source — lauko tranzistorius su priešinėmis užtūra ir ištaka statusas T sritis radioelektronika atitikmenys: angl. opposed gate source transistor vok. Feldeffekttransistor mit einander gegenüberliegenden Gate und Source, m rus. полевой транзистор с… … Radioelektronikos terminų žodynas
Gate turn-off thyristor — For other uses of the word, see GTO (disambiguation). GTO thyristor symbol A gate turn off thyristor (GTO) is a special type of thyristor, a high power semiconductor device. GTOs, as opposed to normal thyristors, are fully controllable switches… … Wikipedia
lauko tranzistorius su priešinėmis užtūra ir ištaka — statusas T sritis radioelektronika atitikmenys: angl. opposed gate source transistor vok. Feldeffekttransistor mit einander gegenüberliegenden Gate und Source, m rus. полевой транзистор с противоположно расположенными затвором и истоком, m pranc … Radioelektronikos terminų žodynas
полевой транзистор с противоположно расположенными затвором и истоком — lauko tranzistorius su priešinėmis užtūra ir ištaka statusas T sritis radioelektronika atitikmenys: angl. opposed gate source transistor vok. Feldeffekttransistor mit einander gegenüberliegenden Gate und Source, m rus. полевой транзистор с… … Radioelektronikos terminų žodynas
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia
Electronic component — Various components An electronic component is a basic electronic element and may be available in a discrete form having two or more electrical terminals (or leads). These are intended to be connected together, usually by soldering to a printed… … Wikipedia
Power optimization (EDA) — Power optimization refers to the use of electronic design automation tools to optimize (reduce) the power consumption of a digital design, while preserving the functionality.Introduction and historyThe increasing speed and complexity of today’s… … Wikipedia
Contact resistance — The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the… … Wikipedia
Cathode ray tube — Cutaway rendering of a color CRT: 1. Three Electron guns (for red, green, and blue phosphor dots) 2. Electron beams 3. Focusing coils 4. Deflection coils 5. Anode connection 6. Mask for separating beams for red,… … Wikipedia